Nanomaterials, Vol. 11, Pages 955: Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods

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Nanomaterials, Vol. 11, Pages 955: Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods
Nanomaterials doi: 10.3390/nano11040955
Authors:
Qide Yao
Xueli Ma
Hanxiang

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